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STP4N150 STW4N150
N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESHTM MOSFET
Table 1: General Features
TYPE STP4N150 STW4N150
s s s s s
Figure 1: Package
ID 4A 4A Pw 160 W 160 W
VDSS 1500 V 1500 V
RDS(on) <7 <7
TYPICAL RDS(on) = 5 AVALANCHE RUGGEDNESS GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES HIGH SPEED SWITCHING
TO-220
3 1 2
1 2
3
DESCRIPTION Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS s SWITCH MODE POWER SUPPLIES
Table 2: Order Codes
SALES TYPE STP4N150 STW4N150 MARKING P4N150 W4N150 PACKAGE TO-220 TO-247 PACKAGING TUBE TUBE
Rev. 3 July 2005 1/11
STP4N150 - STW4N150
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Operating Junction Temperature Storage Temperature Value 1500 1500 30 4 2.5 12 160 1 -55 to 150 Unit V V V A A A W W/C C
( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220 Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 62.5 0.78 50 TO-247 C/W C/W
Table 5: Avalanche Characteristics
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 4 350 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating,TC = 125C VGS = 30 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 2 A 3 4 5 Min. 1500 10 500 100 5 7 Typ. Max. Unit V A A nA V
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STP4N150 - STW4N150
ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 30 V , ID = 2 A VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 750 V, ID = 2 A, RG = 4.7 , VGS = 10 V (see Figure 19) VDD = 600 V, ID = 4 A, VGS = 10 V (see Figure 22) Min. Typ. 3.5 1300 120 12 35 30 45 45 30 10 9 50 Max. Unit S pF pF pF ns ns ns ns nC nC nC
Table 8: Source Drain Diode
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100 A/s VDD = 45V (see Figure 20) ISD = 4 A, di/dt = 100 A/s VDD = 45V, Tj = 150C (see Figure 20) 510 3 12 650 4 12.6 Test Conditions Min. Typ. Max. 4 12 2 Unit A A V ns C A ns C A
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area.
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STP4N150 - STW4N150
Figure 3: Safe Operating Area For TO-220 Figure 6: Thermal Impedance For TO-220
Figure 4: Safe Operating Area For TO-247
Figure 7: Thermal Impedance For TO-247
Figure 5: Output Characteristics
Figure 8: Transfer Characteristics
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STP4N150 - STW4N150
Figure 9: Transconductance Figure 12: Static Drain-source On Resistance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 13: Capacitance Variations
Figure 11: Normalized Gate Threshold Voltage vs Temperature
Figure 14: Normalized On Resistance vs Temperature
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STP4N150 - STW4N150
Figure 15: Source-Drain Forward Characteristics Figure 17: Normalized BVdss vs Temperature
Figure 16: Maximum Avalanche Energy vs Temperature
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STP4N150 - STW4N150
Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Waveform
Figure 19: Switching Times Test Circuit For Resistive Load
Figure 22: Gate Charge Test Circuit
Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times
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STP4N150 - STW4N150
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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Table 9: Revision History
Date 11-Mar-2005 27-Apr-2005 07-Jul-2005 Revision 1 2 3 First release. Removed TO-220FP Complete version Description of Changes
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STP4N150 - STW4N150
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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